安捷倫科技推出工業(yè)上第一個波形發(fā)生器/用于NBTI，高速IV特性的快速測量單元。新模塊擴(kuò)展了安捷倫B1500A用于快速顯示NBTI和其它快速測量應(yīng)用的性能。 安捷倫科技有限公司（NYSE: A）推出一款波形發(fā)生器/快速測量單元（WGFMU），用于其B1500A半導(dǎo)體設(shè)備分析儀，該分析儀能執(zhí)行高速測量所需求的性能及快速NBTI和其他應(yīng)用如：脈沖市制的IV, RTS，新型非揮發(fā)性抗干擾的內(nèi)存像PRAM/ReRAM等。 該設(shè)計用于研究員和可靠性研究的工程師，安捷倫B1530A WGFMU是第一個設(shè)備齊全的模塊，用于提供ALWG與電流或電壓同步的快速測量，速度快達(dá)5ns（十億分之一秒），使其能夠提供高速IV特性。該性能解決了超高速NBTI的特性和大量擺在工程師和科學(xué)家們面前的下一代半導(dǎo)體設(shè)備的其它應(yīng)用問題。 作為半導(dǎo)體器件幾何圖形，收縮起來的尺寸能低于65nm, 由于是新材料，設(shè)備可靠性變得非常重要，新結(jié)構(gòu)和高IC操作溫度。在負(fù)偏壓和高溫情況下，NBTI尤其引起重大的閾值電壓漂移，使其成為關(guān)系高級半導(dǎo)體過程非常重要的可靠性因素之一。許多NBTI研究表明，測量的閾值電壓漂移取決于壓和時間。因此，工程師們必須盡可能快的估測晶體管的特性。此外，由于壓力的類型也會影響閾值電壓降級，依次地，設(shè)備的實(shí)時估計，測量都不僅需要在DC壓力之后，還要求在各種AC壓力后進(jìn)行。 在推出安捷倫B1530A之前，沒有可行性解決方案可以足夠快地捕捉到短暫的特性（少于100微秒），在壓力移除之后，并擁有用于超高速NBTI測試的充足的測量解決方案。 安捷倫Hachioji半導(dǎo)體測試部門的副總裁兼總經(jīng)理Minoru Ebihara說：“安捷倫的測試和解決方案允許用戶可以解決復(fù)雜的技術(shù)挑戰(zhàn)，如超高速NBTI測試。對于實(shí)現(xiàn)精確的預(yù)測設(shè)備可靠性和使用壽命，捕捉NBTI數(shù)據(jù)很重要。新WGFMU將帶給我們的半導(dǎo)體設(shè)備分析儀用戶提供此類性能，并給他們提供更大的靈活性并回報于他們的投資。” [FONT=times] original text [/FONT] [font=times][Color=#708090]New Module Expands Agilent B1500A Capability for Emerging Ultrafast NBTI and Other Applications Requiring Fast Measurement Agilent Technologies Inc. （NYSE: A） today introduced a waveform generator / fast measurement unit （WGFMU） for its B1500A semiconductor device analyzer that performs the high-speed measurements required to characterize ultrafast Negative Bias Temperature Instability （NBTI） and other applications such as pulsed IV, Random Telegraph Signal （RTS）, new types of non-volatile resistive memory like PRAM/ReRAM, etc. Designed for researchers and reliability engineers, the Agilent B1530A WGFMU is the first self-contained module to offer the combination of arbitrary linear waveform generation （ALWG） with synchronized fast current or voltage （IV） measurement as fast as 5 ns （nanoseconds）, enabling accurate high-speed IV characterization. Its capabilities resolve the problem of ultrahigh-speed NBTI characterization and various other applications faced by engineers and scientists working on next-generation semiconductor devices. As semiconductor device geometries shrink below 65 nm （nanometers）, device reliability becomes more important because of new materials, new structures and higher IC operating temperatures. NBTI in particular causes significant threshold-voltage shift under negative bias and high-temperature conditions, making it one of the most critical reliability concerns for advanced semiconductor processes. Many NBTI studies show that the measured threshold-voltage shift depends strongly on both the type of applied stress and the time after stress. Therefore, engineers must evaluate transistor characteristics as quickly as possible after the stress is removed. In addition, because the type of stress also influences the magnitude of the threshold-voltage degradation and, in turn, the device life-time estimates, measurements are required not only after DC stress, but also after various types of AC stress. Prior to the introduction of Agilent‘s B1530A, no available solution could capture the transient characteristics quickly enough （within less than 100 microseconds） after removal of the stress and with sufficient measurement resolution for ultrahigh-speed NBTI testing. "Agilent‘s test and measurement solutions allow our customers to solve complex technology challenges, such as ultrahigh-speed NBTI testing," said Minoru Ebihara, vice president and general manager of Agilent‘s Hachioji Semiconductor Test Division. "For manufacturers to accurately predict device reliability and lifetimes, it is critical to capture this NBTI data. The new WGFMU will give our semiconductor device analyzer customers this capability and provide them with greater flexibility and return on their investment." [/color][/font]